S.
No. |
IGBT |
MOSFET |
| 1. |
Internal resistance low
by which the efficiency increases. |
Internal resistance variable
with the current. |
| 2. |
Current amplification
lc/lg very high (10 to the power 9) |
Low |
| 3. |
Input Impedance is very
low |
High Input Impedance |
| 4. |
Peak current handling
capability is very high as compared to other power devices |
Nominal |
| 5. |
Snubber circuit may be
avoided by choosing proper input circuit |
Snubber circuit must |
| 6. |
Suitable for high frequency
switching application |
MOSFET can be switched
with high frequency but not like MCT/Thyristor |
| 7. |
Input parameter variation
toleration is high, hence highly reliable |
Very sensitive to input
parameter variation and damage if the input parameter vary
frequently, hence makes unreliable |
